Printed circuit board material incorporating binary alloys

ABSTRACT

A novel printed circuit board material in the form of a layered stock comprising an insulating support, at least one layer of electrical resistance material adhering to said support, and a layer of a highly conductive material adhering to the resistance material and in intimate contact therewith, said layer of electrical resistance material being selected from the group consisting of chromium-antimony, chromium-manganese, chromiumphosphorus, chromium-selenium, chromium-tellurium, cobaltantimony, cobalt-boron, cobalt-germanium, cobalt-indium, cobaltmolybdenum, cobalt-phosphorus, cobalt-rhenium, cobalt-ruthenium, cobalt-tungsten, cobalt-vanadium, iron-vanadium, nickel-antimony, nickel-boron, nickel-chromium, nickel-germanium, nickel-indium, nickel-molybdenum, nickel-phosphorus, nickel-rhenium, nickelvanadium and palladium-molybdenum.

United States Patent [191 Castonguay [451 Dec. 31, 1974 PRINTED CIRCUITBOARD MATERIAL INCORPORATING BINARY ALLOYS [75] Inventor: Richard N.Castonguay, Los

Angeles, Calif.

[73] Assignee: The Mica Corporation, Culver City,

Calif.

[22] Filed: July 27, 1973 [21] Appl. No.: 383,088

[52] U.S. CI. 29/195 [51] Int. Cl B32b 15/04 [58] Field of Search 29/195P, 195 G, 195 M [56] References Cited UNITED STATES PATENTS 3,2l8,l94ll/l965 Maissel ll7/2l7 3,493,352 2/l970 Wright et al. 29/195 P X11/1973 Miller 29/195 P Primary Examiner-C. Lovell Assistant ExaminerE.L. Weise Attorney, Agent, or FirmWills, Green & Mueth [5 7 ABSTRACT Anovel printed circuit board material in the form of a layered stockcomprising an insulating support, at least one layer of electricalresistance material adhering to said support, and a layer of a highlyconductive material adhering to the resistance material and in intimatecontact therewith, said layer of electrical resistance material beingselected from the group consisting of chromium-antimony,chromium-manganese. chromium-phosphorus, chromium-selenium,chromium-tel1urium, cobalt-antimony, cobalt-boron, cobaltgermanium,cobalt-indium, cobalt-molybdenum, cobalt-phosphorus, cobalt-rhenium,cobalt-ruthenium, cobalt-tungsten, cobalt-vanadium, iron-vanadium,nickel-antimony, nickel-boron, nickel-chromium, nickel-germanium,nickel-indium, nickelmolybdenum, nickel-phosphorus, nickel-rhenium,nickel-vanadium and palladium-molybdenum.

33 Claims, No Drawings PRINTED CIRCUIT BOARD MATERIAL INCORPORATINGBINARY ALLOYS BACKGROUND OF THE INVENTION Various printed circuit boardmaterials are known. In general, a printed circuit board materialconsists of an insulating support and outer layers of highly conductivematerial on one or both exterior surfaces. Printed circuits withconductor elements can be made from this stock. Essentially, the methodof converting the stock into the desired product comprises the selectivere moval of unwanted portions of the conductive layers to leaveconductive areas having the required electrical properties. The presentinvention is concerned with printed circuit board materials consistingof an insulating support, one or more layers of resistance material, andone or two layers of highly conductive material. Printed circuits withelectrically resistive as well as conductive elements can be made fromthis stock. Essentially, the method of converting the stock into thedesired product comprises the selective removal of unwanted layers toleave areas having the required electrical properties, namely,insulating areas (all layers above the support removed) resistance areas(the conductive layers removed), and conductive areas (no layersremoved).

SUMMARY OF THE INVENTION Briefly, this invention comprehends a novelprinted circuit board material in the form of a layered stock comprisingan insulating support, at least one layer of electrical resistancematerial adhering to said support, and a layer of a highly conductivematerial adhering to the resistance material and in intimate contacttherewith, said layer of electrical resistance material being selectedfrom the group consisting of chromiumantimony, chromiummanganese,chromiumphosphorus, chromium-selenium, chromium-tellurium,cobalt-antimony, cobalt-boron, cobalt-germanium cobalt-indium,cobalt-molybdenum, cobalt-phosphorus, cobalt-rhenium,cobalt-ruthenium,cobalt-tungsten, cobalt-vanadium,iron-vanadium,nickel-antimony, nickel-boron, nickel-chromium,nickel-germanium, nickelindium, nickel-molybdenum, nickel-phosphorus,nickel-rhenium, nickel-vanadium and palladiummolybdenum.

It is an object of this invention to provide a novel printed circuitboard material.

In one aspect, it is a specific object to provide a layered printedcircuit board material wherein there is improved unique resistivematerial in the form of chromi- I um-antimony,

. indium, nickel-molybdenum, nickel-phosphorus, nickel-rhenium,nickel-vanadium and molybdenum.

These and other objects and advantages of this invention will'beapparent from the detailed'description which follows.

palladium- The resistive materialsof this invention are binary alloys,that is, they contain two chemical elements which may be in the form ofsolid solutions, pure metals, in-

' support without loss of physical integrity, as being nonradioactive,as having melting point and crystallographic phase transitions, if any,at temperatures greater than 400C, as having a temperature coefficientof resistivity less than i 300 ppm from -65 to 125C when properlydeposited, as having a diffusion coefficient into alpha phase copperless than 2.89 X

' moles per square centimeter per second, as having current versusvoltage characteristics typical of presently available resistors, and,as having sufficient chemical resistance to withstand normal useconditions when properly protected by passivation, anodization,overplating or coating with an organic or inorganic layer.

The resistive material is deposited from the bath onto a conductive foilsuch as copper. In some cases desirable changes in the resistive filmmay be effected by heating the double layer foil at an elevatedtemperature in air or in a controlled atmosphere at this point in theprocess. The double layer foil is then laminated, resistive side at theinterface, with one or more plies of fiberglass fabric preimpregnatedwith an appropriate formulation of curable organic resins. It frequentlyis desirable to include a layer of highly thermally conductive materialin the laminate construction. Its purpose is to provide a heat transfermechanism for the moderation circuit manufacture, the copper surface iscoated with photoresist. This layer of photoresist is then exposedthrough a photographic negative containing the negative image of thecombined resistor and conductor pat terns. The exposed resistis-developed, and the unexposed portion washed away. The panel with thedeveloped image is then etched in an etchant such as an alkaline etchantor ferric chloride acidified with hydrochloric acid until the barecopper is removed. The panel is then rinsed in waterand immersed in anetchant appropriate for the particular alloy until the bare resistivematerial is removed. Alternatively, the resistive layer may be removedby abrasion with such materials as powdered pumice. The remainingexposed photoresist is stripped off and the panel is coated with a newlayer of photoresist. This layer is exposed through a photographicnegative containing the negative image of the conductor pattern. Theexposed resist is developed, and the unexposed portion washed away. Thepanel with the developed image is then etched in an appropriate etchantuntil the bare copper is removed. The panel is then rinsed in water anddried. At this point, thevconductive and resistive patterns areindividually defined, and in appropriate electrical contact with eachother.

The general procedure as detailed here and further in the examples whichfollow contemplates the use of photographic negatives and negativeworking resists. It should be noted specifically that other processingmaterials, well-known to those skilled in the art of printed circuitmanufacture, are also suitable. For instance, photographic positives canbe used in combination with positive working res'ists (e.g. PR-l02 byGeneral Aniline and Film Corporation). Silk screening techniques canalso be used in conjunction with any resist that is not attacked by theetchants.

The composition range is expressed in weight percent as are all thepercentages in this patent application. The resistivities are given inmicrohm-cm. The first value listed is the resistivity atthe firstcomposition value. The second resistivity value is the maximum valueachieveable within the composition range'stated, this resistivity valuemay not occur at the composition extrema. TCRs are given in parts permillion per degree Centigrade, and reflect the change which occurs overthe temperature range minus 65 Centrigrade to plus 125 Centigrade. Forsuitably electrodeposited alloy films bonded to a suitable fiberglassreinforced substrate, the range of TCR values given generally spans therange of values observed, provided the composition of the alloy iswithinthe range'stated. In some cases, however, a value outside therange of TCR values given may be observed for very limited compositionranges. The extremaof the TCR values are often not coincident with themaximum and minimum composition values.

Reproducible, uniform, fine grained, adherent thin alloy films depositedover large areas of a conductive foil are essential to the practical useof this invention. Among the variety of plating baths available in theprior art, only a fewv baths are suitable for producing films with theabove-mentioned characteristics over the full composition rangespecified, a requirement necessary in order to produce a completeproduct line of resistors. The range of resistors available with onecomposition of alloy is not adequate for these practical applications.The preferred baths are stated in the following examples.

The range of metal, complex, salt and additive concentrations necessaryto produce the full composition range of alloy are given. Theinterrelationship among the metal and complex concentrations as well asthe metal and additive and salt concentrations are wellknown to thoseskilled in the art, as is the variation necessary in the complex, saltand additive concentrations when the metal concentrations are altered inorder to produce different alloy compositions in the deposit. Thepreferred temperature is the lowest temperature in the range given whichwill cause all the components of the bath to remain in solution. Thepreferred pH is the mean value of the ranges indicated. The preferredform of electrical energy is voltage and current controlled directcurrent unless otherwise indicated. The preferred current density isdependent on the alloy composition desired and is obvious to one skilledin the art under the constraints of the other information given.Agitation is used in all the baths. Insoluble anodes are preferred, butsoluble anodes of binary alloy or of either metal are suitable.Additives where necessary to the performance of the bath are indicated,but additives such as are commonly used in electroplating may be usefulto obtain best results with some systems.

Complexing agents other than, or in addition to, the ones stated such ascitrates, tartrates, oxalates, maleates, malonates, glycolates,pyrophosphates, ammonia and boric acid, for both or either of the metalsin the bath are suitable in many instances and are obvious to thoseskilled in the art.

Where the following notation is used: Metal ion (anion), the weightgiven is for the metal only, and the cation and anion indicated are thepreferred species for introducing the metal into the bath. Where theweights given refer to hydrates, the hydrate is explicitly stated in theformula given.

The following examples are presented solely to illustrate the inventionand should not be regarded as limiting in any way.

EXAMPLE I System: Chromium-Antimony Composition: 13 to 74% antimonyResistivity: 74 to 526 microhm-cm TCR: plus l00 to plus 500 ppm/CPlating Techniques:

Chromium trioxide, CrO -300 g/l Potassium antimonate, K,Sb0 l3-l300 g/ISulfuric acid, H,SO, 0-500 g/l Current density 5-50 amp/dm Temperature20-90 pH Acid By varying the antimony content in the bath from 4 to 90%,the antimony content in the deposit may be varied from 13 to 74%.

EXAMPLE It Same as Example I except-eliminate K sbO, and add smo,l6-l600 g/l By varying the antimony content in the bath from 4 to 90%,the antimony content in the deposit'may be varied from 13 to 74%.

EXAMPLE [I] Plating Techniques:

Chromium (fluorborate), Cr3(BF,') 2.6-78 g/l Antimony (fluoborate).Sb(BFf) 6.1-]83 g/l Fluoboric acid (free), HBF. -650 g/l Boric acid, H80 0-50 g/l Current density [-25 amp/dm Temperature 20-80 C pH I acidEXAMPLE IV System: Chromium-Manganese Composition: l0 to 80% manganeseResistivity: 36 to 194 microhm-cm TCR: plus 150 to plus 50 ppm/"CPlating Techniques:

EXAMPLE lV-Continued EXAMPLE lX-Continucd Temperature 20-90 C Telluriumtrioxidc, TcO 9-880 g/l PH acid Sulfuric acid, H 50. -500 g/l Currentdensity -50 amp/dm 5 Temperature 20-90 C pH acid By varing the manganesecontent in the bath from 1.75 to 80%, the manganese content in thedeposit may be varied from to 80%.

EXAMPLE V Plating Technigues:

Chromium ammonium sulfate By varying the manganese content in the bathfrom 2.5 to 40%, the manganese content in the deposit may be varied from10 to 50%.

EXAMPLE VI System: Chromium-Phosphorus Composition: 6 to 52% phosphorusResistivity: 57 to 162 microhm-cm TCR: minus 75 to plus 50-ppmC PlatingTechnigues:

Chromium trioxide. CrO 100-300 g/l Phosphorous acid, H;,PO 4-400 g/lSulfuric acid, H 50 0-98 g/l Current density 5-50 amp/dm' Temperature-90 "C pH acid EXAMPLE VII Same as Example V1 except eliminate H=PO andadd:

H PO 5-500 250 g/l By varying the phosphorus content in Examples VI andVII from I to 73%, the phosphorus content in the deposit may be variedfrom 6 to 52%.

EXAMPLE VIII System: Chromium-Selenium Composition: 14 to 65% seleniumResistivity: 80 to 2300 microhm-cm TCR: plus 100 to plus 800 ppm/CPlating Techniques:

Chromium trioxide, CrO, 100-300 g/l Selenic acid, H,Se0 7.25-725 g/lSulfuric acid, H 50 0-98 g/l Current density 5-50 amp/elm Temperature20-90 C pH acid By varying the selenium content in the bath from 2.5 to88%, the selenium content in the deposit may be varied from 14 to 65%.

EXAMPLE IX System: Chromium-tellurium Composition: 2| to 75% telluriumResistivity: 92 to 420 microhm-cm TCR: plus 100 to plus 500 ppm/CPlating Technigues:

Chromium trioxide, CrO, 100-300 g/l By varying the tellurium content inthe bath from 4 to 95%, the tellurium contentin the deposit may bevaried from 21 to EXAMPLE x Same as Example IX except climinatd'l'cO andadd H TcO l l-l 100 g/l By varying the tellurium content in the bathfrom 4 to the tellurium contentin the deposit may be varied from 21 to75%.

EXAMPLE XI System: Cobalt-Antimony. Composition: 18 to 72% antimonyResistivity: 65 102000 microhm-cm TCR: plus to plus 800 ppm/"C PlatingTechnigues:

By varying the antimony content in the bath from 7'to 99%, the antimonycontent in the deposit may be varied from 18 to 72%.

EXAMPLE XII Plating Techniques:

Potassium antimonyl tartrate, KSbC H,O, 50-1000 g/l Cobalt (sulfate),CO+Z(SO4 Z) 6-60 gll Rochelle salt KNaC.H O 300-300 g/l Current densityl-25 amp/dm Temporal"! 20 0 C pH (by adding ammonia) NH OH 8-11 Byvarying the antimony content in the bath from 23 to 98%, the antimonycontent in the deposit may be varied from 18 to 72%. In some cases, inorder to'obtain a non-crystalline deposit additives must be used in the'bath. Their exact nature depends on the bath composition in use and thesubstrate for the deposit.

EXAMPLE XIII System: Cobalt-Boron Composition: 2 to 36% boronResistivity: 36 to 108 microhm-cm TCR: minus 75 to plus 50 ppm/C PlatingTechniques:

By varying the boron content in the bath from 7 to 70%, the boroncontent in the deposit may be varied from 2 to 36%.

Resistivity: 57 to 292 microhm-cm TCR: plus-300 to plus 100 ppm/"CPlating Technigues:

Sodium molybdate, Na MoO 2H,O 5l 7 gl] EXAMPLE XIV EXAMPLEXVIII-Continued Cobalt (carbonate), Co (CO 10 g/l Pl yi g Technigues;Potassium carbonate, KZCOJ 650 g/l 2 Dimethyl amine borane. (CHg NHBl-l5-100 g/l gg f t ijzj i3 i Sodium malonate, CH,(COONa), 40-130 g/l H p 5H 5 Cobalt (sulfate), CO+2(SO4-) ll-38 g/l p Current density 1-20 amp/dmTemperature 2080 C (by addmg By varying the molybdenum content in thebath from 30 to 85% the molybdenum content in the deposit may l0 Byvarying the boron content in the bath from 3 to be Vaned from to 68%,the boron content in the deposit may be varied EXAMPLE XIX from 2 to36%.

In Examples XIII and XIV the cobalt and the com- Platin Techni ues:plexing agent should be thoroughly mixed before the 15 Sodium mol bdate.NaM O. z z 3 0 g/ boron containing compound is added to the bath. g:?;:3 1 f ggj $2 g: Sodium pyrophosphate, Na4P O 60-80 gll EXAMPLE XVHydrazine sulfate, 2N2H4 HHZSO 1-3 g/l Current density 5-20 am p/dmSystem: Cobalt-Germanium Temperature 3 Composition: 6 to 60% germaniumPH Resis tivity: 34 to 32l microhm-cm TCR: plus 100 to minus 50 ppm/"C Gf f f 0 l5 l5 0 n The hydrazine sulfate prevents undesirable reactionsat erm'nlum OX c b l hl id)fc +zcfi-) (M400 3 the nert anode typlcallyused ln thls bath. By varylng Qmmonium chloride.(:: )C C 04 53-28 2;:the molybdenum content m the bath from 70 to 90%,

mmonlum OX8 ate, Sodium metabisumte, g z g the molybdenum content m thedeposlt may be varled Current density 2-l0 amp/dm from 45 to 55%.Temperature 20-50 pH alkaline EXAMPLE XX Plating Technigues: By varyingthe germanlum content 1n the bath from 5 Sodium m-olybdate NaMOO. v ZHzOg to 90%, the germanium content in the deposit may be Cobalt (s lfate) CWSCF) (7-50 g/l Sodium citrate (NaOOC C H OH 30-300 g/l val-led from 6to Current density 3 l-2O nmp/dm Temperature 25-70 "C EXAMPLE XVI pH (byaddition of ammonia, 3-5 or NHOH; or sulfuric acid, H150) or 9-12System: Cobalt-Indium Composition: l8 to 7l% indium- Resistivity: 65 to335 microhm-cm e TCR: plus '00 m minus 50 pp ac This bath may be used at8010 0! alkallne pl-l values, in Plating Techni ues; the m drange thecurrent efflclency ls undeslrably low. g iur "i( a: The molybdenumcontent in the deposit may be varied 0 at su te o a Current dcnzity 2-12mP/dm from 10 to 65% by varying the molybdenum content ln. Temperature20-70 C the bath from 3 to 77%. PH Regarding the bath of Example XX insome instances 4 it is advantageous to combine the sodium molybdate 5 Byvarying the cobalt and lndlum concentratlons m the 32 gi fi m g t f z ibath as well as the current density, the indium in the de- 6 3 l e isg lg 5; a i o reac posit may be varied from 60 to 71% equll m ls es 15 e ane resu lng comp ex ls Ex M E xv" added to the platlng bath.

A PL 50 EXAMPLE XXI Plating Techniques: Indium (sulfate), ln*"(S0,")0.3-8 g/l a fggggf gfgg gi hows Cwallfisulfm) Cwusofi) 30400 Resistivitto 13s milrollin-cr'n Sulfamtc acld, HgN SO,H g/l TCR g 75 m lus 50Current density 2-l0 amp/dm Plath, Techni pp Tem erature 20-70 "C B pH p1-3 Cobalt (carbonate). Co(C0:") 5-l00 g/l Phosphorous acid. H,PO, 2-[60I g]! Current density 4-40 amp/um Temperature -95 "C As the weight oflndlum In the bath ls lncreased from pH I 0.5-l 0.3 to g/l, the indiumin the deposit rises from 18 B 'nlin 'hbhfl y varying t e p osp oruscontent m t e at rom EXAMPLE to 54%, the phosphorus content in thedeposit may be varied from 6 to 52%; System: Cobalt-MolybdenumComposition: l0 to 65% molybdenum 65 EXAMPLE XX" Plating Technig ues:

Cobalt (chloride), Co**(Cl) 20-l00 g/l EXAMPLE XXII-Continued PlatingTechniques:

Phosphoric acid, H PO, 10-100 g/l Phosphorous acid, H PO; 2-100 g/lCobalt (carbonate) Co(C -15 g/l Current density 4-40 g/l Temperature65-95 "C pH 0.5-1

EXAMPLE XXIII System: Cobalt-Rhenium Composition: 25 to 95% rheniumResistivity: 135 to 438 microhm-cm TCR: plus 300 to plus 100 ppm/"CPlating Techniques Potassium perrhenate, KReO, 1-150 g/l Cobalt(sulfate), Co (80,") 2-25 g/l Citric Acid, HOC HJCOOHM 20-200 g/lCurrent density 2-12 amp/dm Temperature 25-90 C pH (by addition ofammonia NH,0H;

or sulfuric acid H,SO 3-8 By varing the rhenium content in the bath from3 to 80%, the rhenium content in the deposit may be varied from 25 to95%.

EXAMPLE XXIV System: Cobalt-Ruthenium Composition: 16 to 94% rutheniumResistivity: 245 to 680 microhm-cm TCR: plus 100 to minus 50 ppm/CPlating Techniques:

Ruthenium(chloride) Ru(Cl) 0.1-50 g/l Cobalt (chloride), Co(Cl) 2-50 g/lAmmonium chloride. NH,C1 50-120 g/l Potassium chloride, KCl 3-5 g/lHydrogen peroxide, H O, 1-2 g/l Current density 4-10 amp/dm Temperature20-50 C pH (by addition of HC1) 1-3 By varying the ruthenium content inthe bath from 0.5 to 96%, the ruthenium content in the deposit may bevaried from 16 to 94%.

EXAMPLE xxv System: Cobalt-Tungsten Composition: to 72% tungstenResistivity: 37 to 236 microhrn-cm TCR: plus 300 to plus 100 ppm/"CPlating Techniques:

Sodium tungstate,Na,WO -2H:O 10-100 g/l Cobalt (sulfate or chloride),

Co*(SO,"or Cl) 085-40 g/I Citric acid, HOC,H (CO0H), 20-200 g/l Ammoniumchloride, NH CI 0-50 g/l Hydrazine sulfate, 2N,H,-H,S0. 0-10 g/l Currentdensity 2-20 amp/dm Temperature 50-90 C pH (by adding ammonia,NH OH)6.4-9.8

By varying the tungsten content in the bath from 12 to 98%, the tungstencontent in the deposit may be varied from 15 to 72%.

EXAMPLE XXVI Plating Techniques:

Sodium tungstate, Na,WO,.2H,O 15-40 g/l Cobalt (sulfate), Co""(SOf) 2-5g/l Ammonium sulfate (NH ),SO 60-330 g/l Ammonium hydroxide, NH,OI-I -75g/l Sodium hydroxide, NaOH 8-12 g/I Current density -lamp/dm Temperature20-75 C By varying the tungsten content in the bath from 57 to 92%, thetungsten content in the deposit may be varied from 20 to 57%. It ispossible to improve the quality and electrical properties of the depositby superimposing an alternating current on the direct current employedin the electrodeposition. The ratio of AC to DC may be varied from 2:1to 10:1.

EXAMPLE XXVI]- System: Cobalt-Vanadium Composition: 9 to 70% vanadiumResistivity: 48 to 148 microhm-cm TCR: minus 75 to plus 50 ppm/C PlatingTechniques:

Vanadyl sulfate trihydrate,

vos0,.3H,o 7415 g]! Cobalt (sulfate), Co*(SO,") 7-15 g/l Boric acid, H30 25-30 g/l Current density' [-10 amp/dm Temperature 18-80 pH 1-6 Byvarying the vanadium content in the bath from 10 to 74%, the vanadiumcontent in the deposit may be varied from 9 to 70%.

EXAMPLE XXVIII Plating Techniques:

Sodium metavanadate, NaVO; 5-50 g/l Cobalt (chloride), Co(Cl) 10-20 g/lSodium citrate, HOC;,H (COONa);, 50-100 g/] Sodium hypophosphite,NaH,PO, 20-40 g/] Sodium oxalate dihydrate, Na,c,o, 2H,O 20-100 gllCurrent density 1-15 amp/dm Temperature 20-80 C pH alkaline By varyingthe vanadium content in the bath from 9 to 67%, the vanadium content'inthe deposit may be variedfrom 9 to 70%.

EXAMPLE XXIX System: Iron-Vanadium Composition: 9 to vanadiumResistivity: 40 to 217 microhm-cm TCR: minus 75 to plus 50 ppm/C PlatingTechniques:

Vanadium (chloride). V(C1 5-40 g/l Iron (chloride), Fc(Cl) 15-25 g/lHydrochloric or sulfuric acid.

HCl or H 504 0.1 Normal Current density 1-15 amp/dm Temperature 20-80 "CpH 1.0-1.5

5 By varying the vanadium content in the bath from 17 to the vanadiumcontent in the deposit may be varied from 9 to 65%.

EXAMPLE xxx EXAMPLE XXXIV Plating Technigues:

Sodium metavanadate, NaVO -20 gll lron (fluoride), Fe(F) 6.6 g/l lron(chloride), Fe '(Cl') 0.21 g/] Sodium acetate, NaOOCCH, g/l Sodiumhypophosphite, NaH,PO 10 g/l Potassium oxalate, monohydrate K,C O,.H,050 g/l Current density 1-15 amp/dm Temperature 75-90 C pH 4-6 By varyingthe vanadium content in the bath from 27 to 54% the vanadium content inthe deposit may be varied from 20 to 50%.

EXAMPLE XXXI System: Nickel-Antimony Composition: to 74% antimonyResistivity: 50 to 1800 microhm-cm TCR: plus 100 to plus 800 ppm/"CPlating Techniques:

Nickel (fluoborate), Ni(BF,') 2.95-885 g/l Antimony (fluoborate),Sb(BFf) 6.1-183 g/l Fluoboric acid (free), HBF 150-650 g/l Boric acid, H30 0-50 g/l Current density 1-25 amp/dm Temperature -80 C pH acid Byvarying the antimony content in the bath from 6.5 to 98.5%, the antimonycontent in the deposit may be varied from 15 to 74%.

EXAMPLE XXXll Plating Techniques: Potassium antimonyl tartrate,

KSbC.H O 50-1000 g/I Nickel (sulfate), Ni(SO,") 6-60 g/l Rochelle salt,KNaC H O. 30-300 g/l Current density lg/l Temperature 20-80 "C pH(byadding ammonia, NH OH) 8-11 By varying the antimony content in the bathfrom 23 to 98%, the antimony content in the deposit may be varied from15 to 74%. Concerning the baths in Examples XXXI and XXXll; in somecases, in order to obtain a non-crystalline deposit, additives must beused in the bath. Their exact nature depends on the bath composition inuse and the substrate for the deposit.

EXAMPLE XXXlll System: Nickel-Boron Composition: 2 to 36% boronResistivity: 34 to 100 microhm-cm TCR: minus 75 to plus 50 ppm/C.Plating Techniques:

Sodium borohydride, NaBH, 4-40 g/l Nickel (chloride), Ni*(Cl") 5-15 g/lAmmonium hydroxide, NH OH 150-225 g/l Current density 1-15 amp/rimTemperature 20-60 C By varying the boron content in the bath from 7 tothe boron content may be varied from 2 to 36%.

Plating Techniques:

Dimethyl amine borane(CH;,) NHBH 5-100 g/l Sodium malonate, CH,(COO Na)40-130 g/l Nickel (sulfate), Na (SO,") 11-38 g/l Current density 1-20amp/dm Temperature 20-80 C pH (by adding ammonia) 5-6,5

EXAMPLE XXXV System: Nickel-Chromium Composition: 9 to 40% chromiumResistivity: 54 to I62 microhm-cm TCR: plus 150 to plus 50 ppm/"CPlating Techniques:

Chromium (fluoborate), Cr*"(BF,') 10-80 g/l Nickel (fluoborate),Ni"*(BF,) 4-52 g/l Fluoboric acid (free), HBF 150-650 g/l Currentdensity 1-90 amp/dm Temperature 20-80 C pH acid By varying the chromiumcontent in the solution from 16 to the chromium content in the depositmay be varied from 9 to 40%.

EXAMPLE XXXV]- Potassium chromium sulfate, KCr(SO() 400-450 g/l Nickel(formatc), Ni(CHOz) 30-40 g/l Sodium citrate, H0C:H.(COONa) 50-100 g/lBoric acid, H 130; 30-50 g/l Sodium fluoride, NaF 8-13 g/l Glycine, CH(NH )COOH 10-25 g/l Current density 3-35 amp/rim Temperature 20-60 C Byvarying the chromium content in the bath from 65 to 73%, the chromiumcontent in the deposit may be varied from 9 to 40%.

EXAMPLE XXXVI] System: Nickel-Germanium Composition: 6 to 60% germaniumResistivity: 31 to 278 microhm-cm TCR: plus to minus 50 ppm/"C PlatingTechniques:

Germanium (oxide), GeO, 0.15-15.0 g/l Nickel (sulfate), Ni(S0 i 0.1-9.0g/l Ammonium sulfate, (NH4):SO4' 25-30 g/l Ammonium oxalate,(NH.),C,O30-40 g/l Aqua ammonia, NH OH 38-46 g/l Current density 2-10 amp/dmTemperature 20-50 pH alkaline By varying the germanium content in thebath from 5 to 80%, the germanium content in the deposit may be variedfrom 6 to 60%.

EXAMPLE XXXVlll System: Nickel-Indium Composition: 18 to 71% indiumResistivity: 6l to 308 microhm-cm TCR: plus 100 to minus SOppm/"CPlating Technigues:

the midrange the current efficiency is undesirably low..

The molybdenum content in the deposit may be varied from 10 to 65% byvarying the molybdenum content in the bath from 6 to 85%. In someinstances it is advantageous to combine the sodium molybdate and sodiumIr dium (sulfate), li "(S0.") 12 citrate in solution before adding themto the bath. Nickel (sulfate), Nl(SO") 100 g/l Sulfamic acid) (SOs-NH)50 g" These components are allowed to react until equilibgui-rem density33120 flnp/dm mum is established and the resulting complex is addedemperature pH i acid to the plating bath.

lo EXAMPLE XLlll As the weight of iridium in the bath-is increased fromSystem: Nickewhosphoms 0.8 to 7.9 g/l, the indium content in the depositrises Composition: 5 to 50% phosphorus Resistivity: 30 to H5 microhm-cmfrom 18 to TCR: minus 75 to plus 50 ppm/C EXAMPLE xxxlx PlatingTechnigues Nickel (sulfate), Ni"(so.- 30-40 g/l Nickel (chloride),Ni"(cl-) l0-l5 g/l Plating Techniques: Nickel (carbonate), Ni"(CO 5-l5g/l Indium (sulfate), +a so -2 0 [l Phosphoric acid HJPO 50-160 g/lNickel (Sulfate), n t-2 0:4 3 g Phosphorous acid, H PO 2-l40 .g/l Boricacid H3303 30 8 Current density 5-40 ampldm Current density 2-l2 amp/dmTemperature 65400 Temperature 20-70 C PH pH 1-3 By varying the availablephosphorus content in the bath By varying the iridium content in thebath and the cur- (phosphorus in phosphorous acid) from 1 to 53%, therent density the indium content in the deposit may be phosphorus contentin the deposit may be varied from varied from 18 to 71%. 5 to 50%.

EXAMPLE XL EXAMPLE XLIV Indium (sulfate), InWSOf') 15-30 g/l 3 0 Nickel(carbonate), Ni(C0, 60 g/l Nickel (sulfate), Ni**(SO" ll-27 g/l IPhosphorous acid, H PO l0-l70 g/l Current density 2-l2 ai'np/dm Currentdensity 5-40 amp/dm Temperature 20-70 C Temperature 75-95 C pH l-3 pH0.5-1

By varying the weightsofindium and nickel in the bath, and by varyingthe current density, the indium content By varying the phosphoruscontent in the bath from 6 in the deposit may bevaried from 60 to 71%.to 55%, the phosphorus content in the deposit may be EXAMPLE xu variedfrom 5 to 50%. 1 40 EXAMPLE XLV System: Nickel-Molybdenum Composition:1010 65% molybdenum system; Nickepkhenium Resistivity: S0 to 206mlcrohm-cgn Composition; 75 to 95 rhenium R: P 9 to P 100 PP CResistivity: 229 to I06 microhm-cm M TCR: plus 100 to plus 300 ppm/"CSodium molybdate, Na Moo, 2H,O 24-120 g/l Plating Technigues: Nickel(chkmde), NPWCI') Potassium perrhcnate, KRcO 5-250 g/l Sod umpyrophosphate, Na P,O 25-2l5 g/l Nickel (sulfate), +2 s l0 50 t SOdIUITIbicarbonate NaHCO 70-l00 g/l Nickel (chlorideh Ni+2(C|-) 042 g Hydrazinesulfate, N H.H2S0 0-4 g/l Boric acid H330:I 0 g Currenldcnsny g Citricacid, iioc,ii,(cooti) 20-200 gll Temperature 25*70 C Current density 2-l5 amp/dm PH 5 Temperature 25-90 C pH (by addition of ammonia, NH,0H. orsulfuric acid, H2804) 2-8 By varying the molybdenum content in the bathfrom 70 to 95% the mol bdenum-content in the de osit ma y p y By varyingthe rhenium content in the bath from 6 to be varied from 10 .to 45%. a

98%, the rhenlum content in the deposit may be varied EXAMPLE XLIl from75 to 95%.

. EXAMPLE XLVl Plating Technlgues Sodium molybdate, Na,MoO .2H,0 5-75g/l Nickel (chloride), Ni*(Cl') 5-30 g/l System: Nickel-Vanadium Sodiumcitrate, HoC,H- (COONa), 30-l30 g/l Composition: 9 to 72% vanadiumPotassium chloride, KCI 0-75 g/l Resistivity: 4! to I22 microhm-cmCurrent density 2-22 amp/dm TCR: minus 75 to plus 50 ppmlC Temperature25-70 C Plating Techniques: P" y adding hydrochloric acid. or Vanadylsulfate trihydrate, voso..3li,o 7-85 /l or ammonia- NH4OH) Nickel(sulfate), Ni"(SO,") 7-l 5 g/l 5 Boric acid, H380 25-30 g/l gurrentdensity l-l0 amp/dm em erature 18-80 This bath may be used at acid oralkaline pH values; in PH p By varying the vandium content'in the bathfrom 10 to 74%, the vanadium content in the deposit may be varied from 9to 70%.

EXAMPLE XLVll Plating Techniques:

Sodium metavanadate, NaVO 5-20 g/l Nickel (sulfate), Ni"(SO 6.7 g/lSodium acetate, NaOOCCH, g/l Sodium hypophosphite, Nal l PO, l0 g/lPotassium oxalate, K,C,O .H,O 50 g/l Current density l-l 5 amp/dmTemperature 75-90 C By varying the vanadium content of the bath from 24to 55% the vanadium content of the deposit may be varied from 9 to 70%.

EXAMPLE XLVlll System: Palladium-Molybdenum Composition: 9 to 40%molybdenum Resistivity: 78 to 228 microhm-cm TCR: plus 300 to plus 100ppm/C Plating Technigues:

Sodium molybdate, Na,MoO..2H,O g/l Palladium (chloride), Pd"(Cl) 4-7 g/lSodium pyrophosphate, Na P,O-, 25-2l5 g/l Sodium bicarbonate, NaHCO;70-l00 g/l Hydrazine sulfate, N,H .H,SO. 0-4 g/l Current density 2-25amp/dm Temperature 25-75 pH 8-H) By varying the molybdenum content inthe bath from 58 to 92%, the molybdenum content in the deposit may bevaried from 9 to 40%.

EXAMPLE XLIX Plating Technigues:

Sodium molybdate, Na,MoO. 2H,0 5-l3 g/l Palladium (chloride), Pd*'(Cl)20-l00 g/l Ammonium chloride, Nl-LCI 4-45 g/l Ammonia NH, 60-200 g/lCurrent density 2-l5 amp/dm Temperature 25-45 "C pH 1 V 8-ll.5

By varying the molybdenum content in the bath from 2 to 20%, themolybdenum content in the deposit may be varied from 9 to 30%.

EXAMPLE L Plating Technigues:

Sodium molybdate, Na,Mo0 .2H,O 5-57 g/l Palladium (chloride), Pd(Cl')l0-60 g/l Sodium citrate, HOC,H (COONa); 30-[30 g/l Potassium chloride,KCl 0-75 g/l Current density 2-22 amp/dm Temperature 25-70 "C pH 3-6 orThe insulating'support may be any of the materials known to thoseskilled in the art. For example, the support may be a polyimide such asthose based on organic diamines and dicarboxylic or tetracarboxylicacids. The epoxy resins based on the polyglycidyl ethers of organicpolyphenols are also preferred. These resinous supports may contain anyof the familiar reinforcing materials such as fiberglass fabric. Thesupport can also be phenolic resinimpregnated paper, melamineresinimpregnated paper, polyimide resin-impregnated fiberglass fabric,or polyester resin containing chopped glass reinforcement. lt frequentlyis desirable to include a layer of highly thermally conductive materialin the laminate construction. The layer may be laminated to the sideopposite the resistive cladding or within the several plies ofpreimpregnated reinforcement. The

purpose of the thermally conductive layer is to provide a heat transfermechanism for the moderation of electrical heating effects of resistorsformed on the laminate surface. Aluminum and copper foils have beenfound suitable for this purpose.

Having fully described the invention it is intended that it be limitedonly by the lawful scope of the appended claims.

I claim:

1. A novel printed circuit board material in the form of a layered stockcomprising an insulating support, at least one layer of electricalresistance material adhering to said support, and a layer of a highlyconductive material adhering to the resistance material and in intimatecontact therewith, said layer of electrical resistance material beingselected from the group consisting of chromium-antimony containing fromabout 13 74% by weight antimony, chromium-manganese containing fromabout 10-80% by weight manganese, chromium-phosphorus containing fromabout 6-52% by weight phosphorus, chromium-selenium containing fromabout 14-65% by weight selenium, chromiumtellurium containing from about21-75% by weight tellurium, cobalt-antimony containing from about 18-72%by weight antimony, cobalt-boron containing from about 2-36% by weightboron, cobalt-germanium containing from about 6-60% germanium,cobaltindium containing from about l8 -7l% by weight indium,cobalt-molybdenum containing from about 10-65% by weight molybdenum,cobalt-phosphorus containing from about 6-52% by weight phosphorus,cobalt-rhenium containing from about 25-95% by weight rhenium,cobalt-ruthenium containing from about 16-94% by weight ruthenium,cobalt-tungsten containing from about l5-72% by weight tungsten,cobalt-vanadium containing from about 9-70% by weight vanadium, viron-vanadium containing from about 9-65% by weight vanadium,nickel-antimony containing from about 15-74% by weight antimony,nickelboron containing from about 2-36% by weight boron, nickel-chromiumcontaining from about 9-40% by weight chromium, nickel-germaniumcontaining from about 6-60% by weight germanium, nickel-indiumcontaining from about l8-,-7l% by weight indium, nickelmolybdenumcontaining from about 10-65% by weight molybdenum, nickel-phosphoruscontaining from about 5-50% by weight phosphorus, nickel-rheniumcontaining from about 75-95% by weight rhenium, nickel-vanadium,containing from about 9-72% by weight vanadium, and palladium-molybdenumcontaining from about 9-40% by weight molybdenum.

2. The novel printed circuit board material of claim 1 wherein theconductive layer comprises copper foil.

3. The novel printed circuit board material of claim 1 wherein theconductive layer comprises aluminum foil.

4. The novel printed circuit board material of claim 1 wherein thesupport comprises a reinforced organic resin.

5. The novel printed circuit board material of claim 1 wherein thesupport comprises a fiberglass fabric reinforced epoxy resin.

6. The novel printed circuit board material of claim 1 wherein thesupport comprises a fiberglass fabricreinforced polyimide resin- 7. Thenovel printed circuit board material of claim 1 wherein the supportcomprises a reinforced organic resin in which or to which is bonded athermally conductive layer.

8. The novel printed circuit board material of claim 1 wherein theresistive material is chromium-antimony containing from about 13 to 74%by weight antimony.

9. The novel printed circuit board material of claim 1 wherein theresistive material is chromiummanganese containing from about 80% byweight manganese.

10. The novel printed circuit board material of claim 1 wherein theresistive material is chromiumphosphorus containing from about 6 52% byweight phosphorus.

11. The novel printed circuit board material of claim 1 wherein theresistive material is chromium-selenium containing from about 14 65% byweight selenium.

12. The novel printed circuit board material of claim 1 wherein theresistive material is chromium-tellurium containing from about 21 75% byweight tellurium.

13. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-antimony containing from about 18 72% byweight antimony.

14. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-boron containing from about 2 36% by weightboron.

15. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-germanium containing from about 6 60% byweight germanium.

16. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-indium containing from about 18 71% byweight indium.

17. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-molybdenum containing from about 10 65% byweight molybdenum.

18. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-phosphorus containing from about 6 52% byweight phosphorus.

19. The novel printed circuit board material ofclaim 1 wherein theresistive material is cobalt-rhenium containing from about 25 95% byweight rhenium.

20. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-ruthenium containing from about 16 94% byweight ruthenium.

21. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-tungsten containing from about 15 72% byweight tungsten.

22. The novel printed circuit board material ofclaim 1 wherein theresistive material is cobalt-vanadium containing from about 9 by weightvanadium.

23. The novel printed circuit board material of claim 1 wherein theresistive material is iron-vanadium containing from about 9 65% byweight vanadium.

24. The novel printed circuit board material of claim 1 wherein theresistive material is nickel-antimony containing from about 15 74% byweight antimony.

25. The novel printed circuit board material of claim 1 wherein theresistive-material is nickel-boron containing from about 2 36% by weightboron. 26. The novel printed circuit board material of claim 1 whereinthe resistive material is nickel-chromium containing from about 9 40% byweight chromium.

27. The novel printed circuit board material of claim 1 wherein theresistive material is nickel-germanium containing from about 6 60% byweight germanium.

28. The novel printed circuit board material of claim 1 wherein theresistive material is nickel-indium containing from about 18 71% byweight indium.

29. The novel printed circuit board material of claim 1 wherein theresistive material is nickel-molybdenum containing from about 10 65% byweight molybdenum.

30. The novel printed circuit board material of claim 1 wherein theresistive material is nickel-phosphorus containing from about 5 50 byweight phosphorus.

31. The novel printed circuit board material of claim 1 wherein theresistive material is nickel-rhenium containing from about 75 by weightrhenium.

32. The novel printed circuit board material of claim 1 wherein theresistive material is nickel-vanadium containing from about 9 72% byweight vanadium.

33. The novel printed circuit board material of claim 1 wherein theresistive material is palladiummolybdenum containing from about 9 40% byweight molybdenum.

1. A NOVEL PRINTED CIRCUIT BOARD MATERIAL IN THE FORM OF A LAYERED STOCKCOMPRISING A INSULATING SUPPORT, AT LEAST ONE LAYER OF ELECTRICALRESISTANCE MATERIAL ADHERING TO SAID SUPPORT AND A LAYER OF A HIGHLYCONDUCTIVE MATERIAL ADHERING TO THE RESISTANCE MATERIAL AND IN INTIMATECONTACT THEREWITH, SAID LAYER OF ELECTRICAL RESISTANCE MATERIAL BEINGSELECTED FROM THE GROUP CONSISTING OF CHROMIUM-ANTIMONY,CHROMIUM-MANGANESE ABOUT 13 - 74% BY WEIGHT ANTIMONY, CHROMIUN-MANGANESECONTAINING FROM ABOUT 10-80% BY WEIGHT MANGANESE, CHROMIUM-PHOSHORUSCONTAINING FROM ABOUT 6-52% BY WEIGHT PHOSPHORUS, CHROMIUM-SELENIUMCONTAINING FROM ABOUT 14-65% BY WEIGHT SELENIUM, CHROMIUN-TELLURIUMCONTAINING FROM ABOUT 21-75% BY WEIGHT TELLURIUM, COBALT-ANTIMONYCONTAINING FROM ABOUT 18-72% BY WEIGHT ANTIMONY, COBALT-BORON CONTAININGFROM ABOUT 2-36% BY WEIGHT BORON, COBALTGERMANIUM CONTAINING FROM ABOUTFROM ABOUT 6-60% GERMANIUM, COBAL INDIUM CONTAINING FROM ABOUT 18-71% BYWEIGHT INDIUM, COBALT-MOLYBENUM, CONTAINING FROM ABOUT 10-65% BY WEIGHTMOLYBDENUM, COBALT-PHOSPHORUS CONTAINING FROM ABOUT 6-25% BY WEIGHTPHOSPHORUS, COBALT-RHENIUM CONTAINING FROM ABOUT 25-95% BY WEIGHTRHEMIUN, COBALT-RUTHENIUM CONTAINING FROM ABOUT 16-94% BY WEIGHTRUTHENIUM CONTAING TUNGSTEN CONTAINING FROM ABOUT 15-72% BY WEIGHTTUNGSTEN, COBALT-VANADIUM CONTAINING FROM ABOUT 9-70% BY WEIGHTVANADIUM, IRON-VANADIUM, NICONTAINING FROM ABOUT 9-65% BY WEIGHTVANADIUM NICKEL-ANTIMONY CONTAINING FROM ABOUT 15-74% BY WEIGHTANTIMONY, NICKEL-BORON CONTAINING FROM ABOUT 2-36% BY WEIGHT BORON,NICKEL-CHROMIUM CONTAINING FROM ABOUT 9-40% BY WEIGHT CHROMIUM,NICKEL-GERMANIUM CONTAINING FROM ABOUT 6-60% BY WEIGHT GERMANIUM,NICKELINDIUM CONTAINING FROM ABOUT 18-71% BY WEIGHT INDIUM,NICKEL-MOLYBDENUM CONTAINING FROM ABOUT 10-65% BY WEIGHT MOLYBDENUM,NICKEL-PHOSPHORUS CONTAINING FROM ABOUT 5-50% BY WEIGHT PHOPHORUS,NICKEL-RHENIUM CONTAINING FROM ABOUT 75-95% BY WEIGHT RHENIUM,NICKEL-VANADIUM CONTAINING FROM ABOUT 9-72% BY WEIGHT VANADIUM, ANDPALLADIUMMOLYNDENUM CONTAINING FROM ABOUT 9-40% BY WEIGHT MOLYBDENUM. 2.The novel printed circuit board material of claim 1 wherein theconductive layer comprises copper foil.
 3. The novel printed circuitboard material of claim 1 wherein the conductive layer comprisesaluminum foil.
 4. The novel printed circuit board material of claim 1wherein tHe support comprises a reinforced organic resin.
 5. The novelprinted circuit board material of claim 1 wherein the support comprisesa fiberglass fabric reinforced epoxy resin.
 6. The novel printed circuitboard material of claim 1 wherein the support comprises a fiberglassfabric reinforced polyimide resin.
 7. The novel printed circuit boardmaterial of claim 1 wherein the support comprises a reinforced organicresin in which or to which is bonded a thermally conductive layer. 8.The novel printed circuit board material of claim 1 wherein theresistive material is chromium-antimony containing from about 13 to 74%by weight antimony.
 9. The novel printed circuit board material of claim1 wherein the resistive material is chromium-manganese containing fromabout 10 -80% by weight manganese.
 10. The novel printed circuit boardmaterial of claim 1 wherein the resistive material ischromium-phosphorus containing from about 6 - 52% by weight phosphorus.11. The novel printed circuit board material of claim 1 wherein theresistive material is chromium-selenium containing from about 14 - 65%by weight selenium.
 12. The novel printed circuit board material ofclaim 1 wherein the resistive material is chromium-tellurium containingfrom about 21 - 75% by weight tellurium.
 13. The novel printed circuitboard material of claim 1 wherein the resistive material iscobalt-antimony containing from about 18 - 72% by weight antimony. 14.The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-boron containing from about 2 -36% byweight boron.
 15. The novel printed circuit board material of claim 1wherein the resistive material is cobalt-germanium containing from about6 - 60% by weight germanium.
 16. The novel printed circuit boardmaterial of claim 1 wherein the resistive material is cobalt-indiumcontaining from about 18 - 71% by weight indium.
 17. The novel printedcircuit board material of claim 1 wherein the resistive material iscobalt-molybdenum containing from about 10 - 65% by weight molybdenum.18. The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-phosphorus containing from about 6 - 52% byweight phosphorus.
 19. The novel printed circuit board material of claim1 wherein the resistive material is cobalt-rhenium containing from about25 - 95% by weight rhenium.
 20. The novel printed circuit board materialof claim 1 wherein the resistive material is cobalt-ruthenium containingfrom about 16 - 94% by weight ruthenium.
 21. The novel printed circuitboard material of claim 1 wherein the resistive material iscobalt-tungsten containing from about 15 - 72% by weight tungsten. 22.The novel printed circuit board material of claim 1 wherein theresistive material is cobalt-vanadium containing from about 9 - 70% byweight vanadium.
 23. The novel printed circuit board material of claim 1wherein the resistive material is iron-vanadium containing from about 9-65% by weight vanadium.
 24. The novel printed circuit board material ofclaim 1 wherein the resistive material is nickel-antimony containingfrom about 15 - 74% by weight antimony.
 25. The novel printed circuitboard material of claim 1 wherein the resistive material is nickel-boroncontaining from about 2 -36% by weight boron.
 26. The novel printedcircuit board material of claim 1 wherein the resistive material isnickel-chromium containing from about 9 - 40% by weight chromium. 27.The novel printed circuit board material of claim 1 wherein theresistive material is nickel-germanium containing from about 6 - 60% byweight germanium.
 28. The novel printed circuit board material of claim1 wherein the resistive material is nickel-indium containing from about18 - 71% by weight indium.
 29. The novel printed circuit board materialof claim 1 wherein the resistive material is nickel-molybdenumcontaining from about 10 - 65% by weight molybdenum.
 30. The novelprinted circuit board material of claim 1 wherein the resistive materialis nickel-phosphorus containing from about 5 - 50 % by weightphosphorus.
 31. The novel printed circuit board material of claim 1wherein the resistive material is nickel-rhenium containing from about75 - 95% by weight rhenium.
 32. The novel printed circuit board materialof claim 1 wherein the resistive material is nickel-vanadium containingfrom about 9 - 72% by weight vanadium.
 33. The novel printed circuitboard material of claim 1 wherein the resistive material ispalladium-molybdenum containing from about 9 - 40% by weight molybdenum.